IndiumV3, Chine, Analysis, bibRecord, 000864

Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates

Identifieur interne : 000864 ( Chine/Analysis ); précédent : 000863; suivant : 000865

Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates

Auteurs : RBID : Pascal:12-0040777

Descripteurs français

Pascal (Inist)
- Rayonnement UV, Transition interbande, Exciton, Croissance pseudomorphique, Théorie perturbation, Composition chimique, Photoluminescence, Aluminium Gallium Nitrure Mixte, Aluminium Indium Nitrure Mixte, AlGaN, Méthode template.

English descriptors

KwdEn :
- Aluminium Gallium Nitrides Mixed, Aluminium Indium Nitrides Mixed, Chemical composition, Excitons, Interband transitions, Perturbation theory, Photoluminescence, Pseudomorphic growth, Template method, Ultraviolet radiation.

Abstract

The interband excitonic transition energies and their corresponding polarization properties of AlGaN and AlInN alloys pseudomorphically grown on c-plane GaN and AIN templates, have been systematically investigated under the framework of k.p perturbation theory. It is found that by changing alloy composition which is accompanied with misfit strain modulation, the valence band structure of both AlGaN and AlInN can be switched from AlN-like to GaN-like, thus leading to enhancement of the surface ultraviolet emission efficiency. Optimal alloy composition windows for efficient ultraviolet emissions have been established where AlGaN and AlInN alloys grown on AlN template show wider optimal windows than that grown on GaN template.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002402
to stream Main, to step Repository: 002F21
to stream Chine, to step Extraction: 000864

Links to Exploration step

Pascal:12-0040777

Le document en format XML

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<front><div type="abstract" xml:lang="en">The interband excitonic transition energies and their corresponding polarization properties of AlGaN and AlInN alloys pseudomorphically grown on c-plane GaN and AIN templates, have been systematically investigated under the framework of k.p perturbation theory. It is found that by changing alloy composition which is accompanied with misfit strain modulation, the valence band structure of both AlGaN and AlInN can be switched from AlN-like to GaN-like, thus leading to enhancement of the surface ultraviolet emission efficiency. Optimal alloy composition windows for efficient ultraviolet emissions have been established where AlGaN and AlInN alloys grown on AlN template show wider optimal windows than that grown on GaN template.</div>
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Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates

Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates

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Abstract

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